TU1A-4 A 23-35 GHz MEMS Tunable All-Silicon Cavity Filter with Stability Characterization up to 140 Million Cycles
|Student Finalist: ZhengAn Yang||Advisor: Dimitrious Peroulis (Purdue University, USA)|
A connectorized RF MEMS tunable two-pole band-pass filter is demonstrated as the first all-silicon evanescent mode cavity filter operating in the K-Ka band. All filter components are fabricated with cost-effective silicon micromachining techniques. The filter’s poles are controlled by two micro-corrugated MEMS diaphragms that are engineered to be independently controlled with voltages below 140 V, which is 2× lower than previous demonstrations for similar tuning ranges.
TU1D-1 A Circularly Polarized Single Radiator Leaky-Wave Antenna based on CRLH-Inspired Substrate Integrated Waveguide
|Student Finalist: Hanseung Lee||Advisor: Tatsuo Itoh (University of California Los Angeles, USA)
A circularly polarized (CP) composite right/left-handed (CRLH) inspired substrate integrated waveguide (SIW) Leaky-wave antenna (LWA) is presented. A circularly polarized wave is created by adjacently placing two linearly polarized intergidital slots in an orthogonal direction with respect to each other with 90 deg. phase difference. The proposed antenna provides circular polarized waves in addition to the unique frequency scanning property of CRLH SIW antenna, using a single radiating element.
TU2A-1 High-Q Intrinsically-Switched Quasi-Absorptive Tunable Bandstop Filter With Electrically-Short Resonators
|Student Finalist: Eric Naglich||Advisor: Dimitrios Peroulis (Purdue University, USA))|
A tunable high-Q intrinsically-switchable bandstop filter is presented in the 4 to 6 GHz frequency range. It can be reconfigured between all pass and tunable bandstop responses by simply tuning the frequency of its resonators. The filter needs only one tuning element per resonator, has a high quality factor (650), and uses electrically-short resonators. It has 60 dB attenuation over 4.25 to 5.0 GHz with 3 dB bandwidth of 0.8% in the bandstop mode and 1.5 dB insertion loss in the all pass mode.
TU2B-2 Padé Behavioral Model Dependent on Load Reflection Magnitude
|Student Finalist: Jialin Cai||Advisor: Thomas J. Brazil (University College of Dublin, Ireland)|
A new magnitude of load reflection coefficient dependent Padé model is presented in this paper. With this model, we need only sweep the magnitude of reflection coefficient, 〖|Г〗_L, to cover the whole Smith chart, instead of sweeping both the phase and magnitude when performing model extraction. This greatly simplifies the model extraction process from a 2D-load-pull sweep to a 1D sweep. Both simulation and measured results are given, demonstrating good accuracy with the proposed model.
TU2D-4 Physics-Based Large-Signal Modeling for Intrinsically Tunable and Switchable Ferroelectric FBARs
|Student Finalist: Seungku Lee||Advisor: Amir Mortazawi (University of Michigan, USA)|
Ferroelectric FBARs based on multifunctional BST material possess voltage-tunable permittivity and voltage-induced piezoelectricity. These properties are promising for the design of a new class of high-power-level reconfigurable RF devices for frequency-agile systems. In the design of such devices, an effective large-signal model is crucial. In this paper, an improved physics-based large-signal model is developed by exploiting capacitor nonlinearity to model entire resonator nonlinearity.
TU3B-1 An 81GHz, 470mW, 1.1mm2 InP HBT Power Amplifier with 4:1 Series Power Combining using Sub-quarter- wavelength Baluns
|Student Finalist: Hyun-chul Park||Advisor: Mark Rodwell (University of California Santa Barbara, USA)|
We report a two-stage W-band power amplifier (PA) using novel 4:1 series power-combining with sub- /4 baluns. The power amplifier, fabricated in a 0.25μm InP HBT technology, produces 470mW (26.7dBm) output power at 81GHz, 23.4% peak PAE, and 11.5 GHz 3dB-bandwidth. The compact series power-combining networks permit a small 1.06mm2 die area and a high 443mW/mm2 output power per unit die area.
TU4A-1 Directly Heated Four-Terminal Phase Change Switches
|Student Finalist: Muzhi Wang||Advisor: Mina Rais-Zadeh (University of Michigan, USA)|
This paper reports on the design, fabrication, and measured results of a directly heated phase change RF switch using germanium telluride in a four-terminal configuration. The switch design combines the advantages of directly heated vias, such as low power dissipation for phase transition, and indirectly heated vias, such as high power handling capability. The switch exhibits insertion loss of 0.6 dB and isolation of 20 dB at frequencies up to 20 GHz, indicating a cutoff frequency of 3 THz.
TU4D-3 A Linear Complexity H^2-matrix Based Direct Volume Integral Solver for Broadband 3-D Circuit Extraction in Inhomogeneous Materials
|Student Finalist: Saad Omar||Advisor: Dan Jiao (Purdue University, USA)|
A linear-complexity direct matrix solution for the volume integral equation is developed for the full-wave extraction of general 3-D circuits, containing arbitrarily shaped lossy conductors immersed in inhomogeneous dielectrics, with ports located anywhere in the physical layout of the circuit. Numerical simulations of large-scale 3-D circuits involving millions of unknowns and comparisons with linear-complexity iterative solvers have demonstrated the advantage of the proposed direct solver.
TU4E-4 Microwave-Induced Temperature Fields in Graphite Powder Heated in a Waveguide Reactor
|Student Finalist: Chuqiao Yang||Advisor: Vidam Yakovlev (Worchester Polytechnic University, USA)|
Microwave-enabled exfoliation of graphite oxides has been shown to be capable of quickly producing graphene sheets of larger size and with fewer defects with the potential for low-cost mass production. In this paper, we investigate microwave heating of graphite powder in a waveguide reactor using multi-physics macroscopic modeling and experimentation. High heating rate and strong non-uniformity of temperature are demonstrated and discussed as the key characteristics that require rigorous control.
TU4F-4 Improvement on linearity with iterative calibration technique for multilevel LINC transmitters
|Student Finalist: Junqing Guan||Advisor: Renato Negra (RWTH Aachen University, Germany)|
This paper proposes an iterative calibration technique to enhance the linearity for multilevel LINC transmitters. With this approach, the precision of characterising AM/AM and AM/PM behaviours can be improved, which results in better ACLR and EVM. Up to 5 dB ACLR improvement can be observed by iterative calibration using S1/S2 for 5 MHz LTE signals. Measurement results show an ACLR of -46 dBc, EVM of 4.2% (64-QAM) at output power of 35.7 dBm with 51.1% drain efficiency for 10 MHz LTE signals.
TU4G-2 A 24-GHz Fully Integrated Isolator with High Isolation in Standard RF 180-nm CMOS Technology
|Student Finalist: Jen-Feng Chang||Advisor: Huei Wang (National Taiwan University, Taiwan)|
A novel 24-GHz MMIC isolator is developed in TSMC 0.18-μm CMOS. A new topology using the nonreciprocal common-source amplifier and the directional coupler is proposed to realize an isolator without ferrite. This isolator achieves 36-dB isolation with 1.8-dB insertion loss. The dc power consumption is only 3.6 mW. The performance of this isolator is comparable to those of the ferrite isolators except for the bandwidth.
WE1A-4 Millimeter-Wave Bandstop Filter with Absorptive Stopband
|Student Finalist: Jhih-Ying Shao||Advisor: Yo-Shen Lin (National Central University, Taiwan)|
This paper presents a new application of absorptive bandstop filter (ABSF) for absorbing the LO-to-RF leakage of mixer in a Q-band heterodyne receiver. In order to facilitate the receiver system integration, the proposed ABSF is implemented in GaAs pHEMT process with a stopband from 31 to 33 GHz. The measured stopband rejection is better than 35 dB at f0 = 32 GHz. Especially, more than 93.4% of the power in the stopband can be absorbed by the ABSF.
WE1F-5 56 GHz Bandwidth FMCW Radar Sensor with On-Chip Antennas in SiGe BiCMOS
|Student Finalist: Shuai Yuan||Advisor: Hermann Schumacher (Ulm University, Germany)|
This paper presents the design and characterization of an ultra wideband FMCW radar sensor in SiGe BiCMOS technology with on-chip antennas. The radar demonstrates a ultra wide bandwidth of 56.8GHz from 104.4GHz to 161.2GHz. The on-chip antenna occupies only 1.2×0.9mm2 and exhibits a measured gain above 4dBi for more than 28 GHz of bandwidth. The sensor covers a bandwidth from 105 to 160GHz with about 10dB Tx-to-Rx gain fluctuation. FMCW radar test shows a range resolution of approximately 5mm.
WE1G-2 A 135-160 GHz Balanced Frequency Doubler in 45 nm CMOS with 3.5 dBm Peak Power.
|Student Finalist: Hsin-chang Lin||Advisor: Gabriel Rebeiz (University of California San Diego, USA)|
A 135-160 GHz active doubler has been developed in 45 nm CMOS SOI. Careful optimization is done on the transistor size, layout and transmission-lines in order to result in the best performance. The doubler shows a measured peak power of +3.5 dBm at 150 GHz and 2 dBm at 140-160 GHz, at a bias voltage of 1 V. To our knowledge, these are the best results achieved for a D-band doubler in SiGe or CMOS, and shows that advanced CMOS technology can be used to generate wideband power above 100 GHz.
WE1H-1 Post Phase Correction for Stable Fiber Delivery of Radio-Frequency Signal
|Student Finalist: Juan Wei||Advisor: Shilong Pan (Nanjing University of Aero. & Astro., China)|
A simple, compact, cost-effective post-phase correction method for stable fiber transfer of RF signal is proposed and demonstrated. By employing only one LO source and two frequency mixers, a RF signal is transmitted to the local station with very small phase jitter. An experiment is performed. When a 6-GHz RF signal is delivered through a 20-km SMF, effective cancellation of the phase jitter induced by the environment perturbations is achieved. The residual jitter is less than 0.07 rad.
WE2B-5 Design of a Broadband Three-Way Doherty Power Amplifier for Modern Wireless Communications
|Student Finalist: Xuan Anh Nghiem||Advisor: Renato Negra (RWTH Aachen University, Germany)|
The design and implementation of a broadband 3-way Doherty power amplifier (DPA) based on the sequential DPA concept is presented. The implemented DPA is characterised, showing a measured drain efficiency of 55-69% over 500 MHz at 12-14dB output power back-off (OBO) and 60-75% over 600 MHz at saturation is achieved. Linearised measurement with a 10 MHz-LTE signal with 8.2dB PAPR at 2.1 GHz shows an average efficiency of 59% and ACLR of better than -45.5/-45.7dBc at 34.5 dBm average output power.
WE2C-1 Highly Sensitive RF Detection and Analysis of DNA Solutions
|Student Finalist: Yan Cui||Advisor: Pingshan Wang (Clemson University, USA)|
We report the operation of a highly sensitive, tunable and stable RF interferometer used to characterize and analyze DNA molecules, pBluescript (SK+) and pET21a,in 1 nL DI water solutions. The obtained RF sensitivity at 10 GHz is better than 3 fM. DNA molecular compositions are analyzed from RF measurements. We also show that partly damaged DNA molecules exhibit significant dielectric property changes. Additionally, DNA solution dynamics (i.e. relaxation time) is obtained through RF measurements.
WE2H-1 A 21-to-54.5GHz Transformer-Coupled Varactorless 45 nm CMOS VCO
|Student Finalist: Shadi Saber||Advisor: Jeyanandh Paramesh (Carnegie Mellon University, USA)|
A dual-resonance mode millimeter-wave VCO with a transformer-coupled resonator in 45nm SOI CMOS is presented that achieves a record tuning range of 88.5% and generates frequencies in 21.1-to-54.5GHz range while consuming only 8-16mW from a 1V supply. Switched capacitors banks and a switched coupled inductor provide coarse tuning, while fine frequency tuning is performed with current-mode tuning. With phase noise lower than -107dBc/Hz at 10MHz, the FOMT of this VCO is better than-185.4 dB.
WE3G-1 Cryogenic Small-Signal and Noise Performance of 32nm SOI CMOS
|Student Finalist: Ahmet Hakan Coskun||Advisor: Joseph Bardin (University of Mass., Amherst, USA)|
The noise performance of a 32 nm SOI CMOS process is systematically studied for ambient temperatures in the range of 6–293 K. For a fixed transconductance bias, an order of magnitude improvement in calculated Tmin is observed by cooling from room temperature to 6 K. This improvement is largely attributed to improvements in the device resistances as well as the reduction in thermal noise associated with cooling.
WE3H-4 A 67-110GHz CMOS to WR-10 Waveguide Transition using Wirebonds and Wideband Microstrip Launcher
|Student Finalist: Samuel Jameson||Advisor: Eran Socher (Tel Aviv University, Israel)|
This paper presents a transition with wire-bonds from a CMOS chip to a W-band waveguide. First a transition from a CPW line on a PCB to a W-band waveguide was realized and then a CMOS chip was wire-bonded to the CPW line. The transition has a bandwidth of 49% (67-110 GHz) and an average insertion loss of 0.35 dB. The RF wire-bonds introduces in average 0.2 dB loss in the W-band. A 100 GHz signal of a CMOS VCO was transmitted successfully through this transition with less than 2 dB loss.
WEP-12 Frequency Scalable Large Signal Transistor Behavioral Model based on Admittance Domain Formulation
|Student Finalist: Minghao Koh||Advisor: Paul Tasker (Cardiff University, United Kingdom)|
This paper introduces the first formulation and approach that enables measurement based non-linear behavioral look-up table transistor models to be frequency scalable. The experimental results on a GaN HFET from 2 GHz to 8 GHz, support theoretical analysis that frequency domain behavioral models defined in the admittance domain have frequency scalable model coefficients.
WEP-52 Frequency-Tunable Slot Antenna Using Continuous Electrowetting of Liquid Metal
|Student Finalist: Ryan Gough||Advisor: Wayne Shiroma (University of Hawaii, USA)|
A frequency-tunable slot antenna is presented which uses liquid metal as its tuning mechanism. The liquid metal is driven by continuous electrowetting (CEW), a process by which a low-voltage electrical signal induces motion in a liquid-metal droplet. The process is both fully reversible and repeatable, and the electrical driving mechanism can be easily integrated into modern electronic architectures. We believe this is the first instance of CEW being used to create a tunable RF device.
TH1A-2 An Analytical Approach to Synthesis of Diplexers with an Optimal Lumped Element Junction Model
|Student Finalist: Ping Zhao||Advisor: Ke-Li Wu (The Chinese University of Hong Kong, Hong Kong)|
This paper presents an analytical approach to synthesis of a diplexer with a lumped element junction model. Both non-resonant node type and the resonator type of junctions are considered in a uniform way. Different from existing diplexer synthesis methods, the junction model is synthesized rather than fixed at the beginning, to optimally satisfy the required overall diplexer performance. The new scheme is suitable for designing coaxial combline type of diplexer.
TH1B-3 Single Feedback Loop-based Digital Predistortion for Linearizing Concurrent Multi-band Transmitters
|Student Finalist: Chao Yu||Advisor: Anding Zhu (University College Dublin, Ireland)|
In this paper, a single feedback loop-based digital predistortion(DPD) architecture with a related DPD method is proposed to linearize concurrent multi-band transmitters. The proposed DPD method can successfully extract nonlinear characteristics of power amplifiers by utilizing the captured output signals separated in both time and frequency domain. Experimental results showed that the proposed DPD architecture can significantly reduce the system cost in both feedback loop and model complexity.
TH1E-2 Dermatological verification of micromachined millimeter-wave skin-cancer probe
|Student Finalist: Fritzi Töpfer||Advisor: Joachim Oberhammer (KTH, Sweden)|
This paper presents for the first time measurement data on in-vivo dermatological experiments verifying the performance of a micromachined millimeter-wave medical probe designed for skin-cancer diagnosis. The tests comprise measurements at different skin sites; of skin burns; of benign skin neoplasma; and monitoring of the healing process in standardized dermatological tests using a skin-irritant. All tests show that millimeter-wave sensors are capable of detecting skin anomalies and defects.
TH1F-5 A Thin Printed Metasurface For Microwave Refraction
|Student Finalist: Joseph P. Wong||Advisor: George Eleftheriades (Univerisity of Toronto, Canada)|
This paper presents a novel thin metasurface for microwave refraction. The metasurface is based on the new concept of establishing orthogonal electric and magnetic currents (Huygens sources) on a surface thus physically implementing the equivalence principle. In contrast to previous work the proposed metasurface is entirely printed on a single board and contains both an electric and magnetic response. This makes it electrically thin and readily scalable to millimeter-wave frequencies and beyond.
TH2C-4 A 50 - 60 GHz Rectifier with -7dBm Sensitivity for 1 V DC Output Voltage and 8% Efficiency in 65-nm CMOS
|Student Finalist: Hao Gao||Advisor: Peter Baltus (Eindhoven University of Tech., The Netherlands)|
This paper presents a 50–60 GHz fully integrated 3-stage rectifier in 65nm CMOS technology. A body-drain connection technique is proposed and implemented to improve the sensitivity for on-chip wireless power transfer while maintaining a compact size. The work achieves its peak sensitivity at 52GHz, providing a 1V dc output voltage for an input power of -7dBm. The overall sensitivity over the entire operational range of 50–60GHz is below –2dBm.
TH2F-1 A Package-Integratable Six-port Reflectometer for Power Devices
|Student Finalist: Razvan Venter||Advisor: Leo de Vreede (Tech. University of Delft, The Netherlands)|
RF power devices require specific loading conditions to provide maximum output power, operate efficiently and avoid self-destruction. In applications with unknown or time varying loading conditions it is therefore desirable to monitor in-situ the loading conditions offered to the PA. This work proposes an ultra-compact six-port package-integratable reflectometer. Its performance is validated employing an active load-pull system, which provides impedances over the entire Smith chart.
TH2G-1 An 8-psec 13dBm Peak EIRP Digital-to-Impulse Radiator with an On-chip Slot Bow-Tie Antenna in Silicon
|Student Finalist: M. Mahdi Assefzadeh||Advisor: Aydin Babakhani (Rice University, USA)|
A direct digital-to-impulse transmitter is implemented that radiates impulses with EIRP of 13dBm and a record pulse-width of shorter than 8psec. The starting time of the radiated impulses are locked to the edge of the input trigger. It is demonstrated that two widely spaced chips can generate coherent impulses in space with timing jitter of better than 270fsec. The frequency stability of the radiated impulses is better than 10Hz at 220GHz. The chip is fabricated in a 130nm SiGe BiCMOS process.
TH2H-2 Inkjet Printed Ferrite-Filled Rectangular Waveguide X-Band Isolator
|Student Finalist: Muhammad Fahad Farooqui||Advisor: Atif Shamin (King Abdullah UST, Saudi Arabia)|
For the first time, a rectangular waveguide isolator realized through inkjet printing on a ferrite substrate is presented. All four walls of the waveguide have been inkjet printed on an Yttrium iron garnet (YIG) substrate showing the utility of inkjet printing in realizing non-planar microwave devices. The isolation is achieved by applying an anti-symmetrical DC magnetic bias to the ferrite-filled waveguide. The isolator shows a peak isolation of 69 dB and minimum insertion loss of 2.73 dB.
TH2H-2 Towards the Design and Fabrication of Graphene based Flexible GHz Radio Receiver Systems
|Student Finalist: Maruthi Nagavalli Yogeesh||Advisor: Deji Akinwande (University of Texas-Austin, USA)|
We present the design and fabrication of high speed flexible graphene field effect transistors (GFETs) with high electron mobilities (~8000cm2/V.s), hole mobilities (~ 6600cm2/V.s) and record intrinsic transit frequency of ~35GHz. We also present the design and fabrication of the first flexible graphene based amplitude modulated (AM) radio receiver at 2.4GHz. This radio has a GFET based demodulator and flexible graphite microstrip patch antenna at 2.4GHz.
TH3C-7 RFID tags on cork stoppers for bottle identification
|Student Finalist: Ricardo Gonçalves||Advisor: Nuno Borges Carvalho (Univ. de Aveiro, Portugal)|
This paper presents the design of two UHF RFID tags in cork substrate. The RFID tags are designed to be compact and conformal to fit within the size and shape of the bottle and barrel stoppers. In a first step, the selected cork material is characterized taking into account the anisotropic properties of cork substrates and after the characterization two RFID tags are designed and optimized to cover a certain read range when placed inside bottle and barrel corks.
TH3E-3 A 40GS/s Track-and-Hold Sampler with 62dB SFDR3 in 45nm CMOS SOI
|Student Finalist: Himanshu Aggrawal||Advisor: Aydin Babakhani (Rice University, USA)|
A 40GS/s Track-and-Hold sampler with active cancellation capability is presented to mitigate the effect of leakage in transmission gate during the holding mode. A single-ended RF input signal is converted to a differential signal that feeds the active cancellation network. A record SFDR3 of 62dB with 40GS/s and 5GHz input frequency is reported in 45nm CMOS SOI. A droop voltage of 20μv/ns is measured. An isolation of 32dB at 1GHz between the holding and tracking modes is recorded.